Argument for Anti-Fuse Non-Volatile Memory in 28-nm High-K Metal Gate
Publication: EE Times Memory Designline
Contributor: Kilopass Technology, Inc.
October 15, 2011 -- With 28-nm high-K metal Gate (HKMG) semiconductor production ramping in 2012, system-on-chip (SOC) designers are presented with the silicon real estate and economic incentive to integrate more functionality on-chip. One function that continues to be challenging for on-chip integration is non-volatile memory (NVM) despite its many advantages. At smaller process geometries, especially 28-nm HKMG, the challenges to integrating NVM such as flash, pseudo flash, and e-fuse are effectively addressed with an anti-fuse solution.
By Andre Hassan. (Hassan is Field Marketing and Applications Director at Kilopass Technology, Inc.)
Reprinted from SOCcentral.com, your first stop for ASIC, FPGA, EDA, and IP news and design information.
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