February 26, 2008 -- Jazz Semiconductor today announced enhancements to its advanced Bipolar CMOS DMOS (BCD) process platform including the addition of an ultra low Rdson scalable NLDMOS device. This Rdson reduction enables up to a 50% shrink in die size in most power devices. In addition, Jazz has leveraged its RF modeling expertise to offer leading-edge power modeling which allows IC designers to confidently design large drivers required in high-speed switching applications.
Jazz offers a full line of high-voltage BCD process technologies, ranging from 0.5-micron to 0.18-micron, providing a complete array of solutions from linear regulators to the most advanced digital control Point of Load (POL) regulators. The BCD process platform offers a total solution for power-management IC designers and is well-suited for low leakage power requirements. The feature set of these process technologies includes: 5-V CMOS, a 1-kohm poly resistor, MIM capacitors, and a broad voltage range of LDMOS transistors designed to operate at 12V or 20V to 40V with ultra low Rdson at all voltage levels. Additional features include: VIA stacking, thick top power metal (3um) for improved current-carrying capacity, ESD protection circuits, and triple well isolation. The 0.18-micron BCD process adds the combination of high density 1.8-V digital CMOS with higher voltage drivers required for highly integrated Power SOC designs.
Jazz Semiconductor offers a full design kit and modeling support for the BCD process platform including support for digital standard cells and analog models for all devices. The design kit also includes a novel scalable model for the LDMOS devices that allows designers to vary the voltage rating (and Rdson) of the high voltage LDMOS devices continuously from 20V to 40V rather than making use of fixed cells as typically done in the past. This provides IC designers an added tool in optimizing the tradeoff between die area and voltage handling performance to result in the lowest die cost for a wider variety of applications.
