April 30, 2012 -- RF Micro Devices, Inc. (RFMD) has announced the extension of its GaN process technology portfolio to include a new technology optimized for high-voltage power devices in power conversion applications. RFMD's newest GaN process technology, rGaN-HV, enables substantial system cost and energy savings in power-conversion applications ranging from 1 to 50KW.
RFMD's rGaN-HV delivers device-breakdown voltages up to 900V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes. The new technology complements RFMD's GaN 1 process, which is optimized for high-power RF applications and delivers high breakdown voltage over 400V, and RFMD's GaN 2 process, which is optimized for high-linearity applications and delivers high breakdown voltage over 300V. RFMD will manufacture discrete power device components for customers in its Greensboro, North Carolina, wafer-fabrication facility and provide access to rGaN-HV to foundry customers for their customized power device solutions.