March 12, 2012 -- Since its introduction in 1988 by Toshiba, NAND Flash non-volatile memory has undergone an unprecedented growth, becoming one of today's technology drivers. Although NAND Flash memory has scaled to 1x-nm feature sizes, shrinking cell sizes reduce the number of electrons stored on the floating gate. Resistive RAM (RRAM) provides an alternative.
In this article, we review the main performance figures of hafnium-oxide (HfO2)-based RRAM cells from a scalability perspective, outlining their strengths as well as the main challenges ahead.
By Bogdan Govoreanu. (Bogdan Govoreanu is a principal scientist with IMEC Leuven and a staff member of the Memory Device Design Group, Process Technology Unit.)
This brief introduction has been excerpted from the original copyrighted article.
