June 4, 2012 -- GlobalFoundries today announced support for Agilent's GoldenGate RFIC circuit and Momentum 3D planar electromagnetic (EM) simulators for its 65-nm Low-Power enhanced (LPe) RF CMOS process.

The 65LPe RF CMOS process is based on GlobalFoundries' 65-nm Low-Power enhanced process. Process and model compatibility between these baseband and RF processes ensures intellectual property designed for baseband products is fully transferrable to the RF CMOS SOC solution. With its suite of RF components, low-leakage transistors, VNCAP (metal-oxide-metal capacitor), MIM (metal-insulator-metal capacitor), thick metal inductors, and varactors, the 65-nm LPe RF CMOS process provides an ideal platform for low-power and high-performance SOC solutions.

"Support for GoldenGate provides our customers access to Agilent's proven expertise in RF and microwave design. As a next step, we are working to qualify Agilent's RFIC solution for the 65-nm and 55-nm nodes," said Richard Trihy, Director of Design Methodology at GlobalFoundries.

Both GoldenGate and Momentum are seamlessly integrated into the Cadence Virtuoso Platform.